"Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates" A. Konkar, A. Madhukar, and P. Chen APL 72 (2), 220 (1998).
 

Description:

Controlling the fabrication of nanoscale features requires a delicate balance of self-assembled chemical reactions and direct control from outside forces.  Quantum Dots (QDs) provide interesting electronic and optical properties, but often they are formed in random dispersions of material on a surface, making it difficult to probe large arrays and obtain uniform responses.  Researchers have been able to induce growth of indium aresenide (InAs) quantum dots by prepatterning long nanomesas in gallium aresenide (GaAs).  The InAs migrates to sit on top of the nanomesas, forming the QDs there.  The above AFM images show the InAs QDs growing on top of nanomesas of different widths.

Previous Day/Next Day

Please contact the webmaster if you would like to submit an image