V. Milanovic, L. Doherty, D. Teasdale, S. Parsa, C. Zhang, and K. Pister, "Micromachining Technology for Lateral Field Emission Devices,'' IEEE Tran. Electron Devices, vol. 48, no. 1, pp. 166-173, Jan. 2001.

Description:

A novel low cost and simple methodology for fabrication of Si nanowires lends itself to simple device design and testing, as the nanowires are laterally etched into silicon, or SOI wafers providing needed isolation for experiments. This process requires only standard, e.g. 1 µm, lithography. Researchers are exploring possible thermoelectric, biomedical, electronic, and light-emitting applications. Nanowire diameters are chosen by subsequent oxidation thinning. Wires with n-type or p-type or junctions can also be fabricated.

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