Surface processes play a key role in epitaxial and heteroepitaxial film growth, heterogeneous catalysis, and MEMS technology. For example, strain relaxation processes and surface/interface energies, affect the morphological evolution of surfaces growing under strain, e.g., self-assembly of nanodots in heteroepitaxy. This fascinating phenomenon is not only interesting from the fundamentally physical standpoint, but bears important implications for semiconductor and other hi-tech industries. Real-time scanning tunneling microscopy (STM) monitoring of the nucleation and growth of nanostructures that appear on the strained surfaces during growth is a great tool for understanding these processes.  CoSi₂/Si(001) is an example of a layer under relatively small tension. In spite of these differences, the early stage growth results in a the appearance of nanodots. Analysis of the late growth stages indicates different growth mechanisms. Understanding the mechanisms underlying these similarities and differences will allow to intentionally "engineer" the desired surface morphologies and properties.
 

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