Description:

Metal-catalyzed Si and Ge nanowires are being considered for the channels of field-effect transistors, for sensors, and for interconnections between nanoelectronics and microelectronics. Si nanowires have been studied most extensively, but Ge nanowires may offer the possibility of lower temperature growth and thus easier integration with conventional electronic devices.  Their growth mechanism is less understood and different structures arise as a function of the growth temperature.

At somewhat lower temperatures, clear facets are seen on the sides of the majority of the nanowires, as shown in this SEM (Scanning Electron Micrograph) image. These nanowires are generally 6-fold faceted. When the nanowires are significantly tapered, terraces appear along the faceted sides to accommodate the changing diameter.

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