Description:

Dry etching research activities are being focused more and more on processing in high density plasmas: an electron cyclotron resonance (ECR) driven plasma and an inductively coupled plasma (ICP). Besides higher etch rates these plasmas provide independent control of chemical and physical fluxes which enables a superior control of the plasma-substrate interactions. An illustrative example is shown in the figure, with nano-pillars dry etched in silicon, approximately 100 nm in diameter and 5 micron high. The equal etch rate in between the pillars and in the open area points to a rate limiting step determined by surface kinetics. The observed selectivity of several thousands is extremly high and opens many perspectives. Further process characterisation is underway.
 

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