Description:

Transistors are the basic building blocks of integrated circuits. To use nanotubes in future circuits it is essential to be able to make transistors from them. Researchers at IBM  have successfully fabricated and tested nanotube transistors using individual multi-wall or single-wall nanotubes as the channel of a field-effect transistor (FET).  The electrical characteristics of this nanotube-FET show that the amount of current (ISD) flowing through the nanotube channel can be changed by a factor of 100,000 by changing the voltage applied to a gate (VG).

Previous Day/Next Day

Please contact the webmaster if you would like to submit an image