www.nanopicoftheday.org
July 6, 2004
Zinc Oxide Nanowire
Source: Hou T. Ng
References:
"Single Crystal Nanowire Vertical Surround-Gate Field
Effect Transistor" Hou T. Ng, J. Han, Toshishige
Yamada, P. Nguyen, Yi P. Chen, and M. Meyyappan.
Nano Lett.; 2004; 4(7) pp 1247 - 1252
Description:
Harnessing the potential of single crystal inorganic nanowires for
practical advanced nanoscale applications requires not only reproducible
synthesis of highly regular one-dimensional (1D) nanowire arrays directly on
device platforms but also elegant device integration which retains structural
integrity of the nanowires while significantly reducing or eliminating complex
critical processing steps. Here we demonstrate a unique, direct, and bottom-up
integration of a semiconductor 1D nanowire, using zinc oxide (ZnO) as an
example, to obtain a vertical surround-gate field-effect transistor (VSG-FET).
The vertical device structure and bottom-up integration reduce process
complexity, compared to conventional top-down approaches. More significantly,
scaling of the vertical channel length is lithographically independent and
decoupled from the device packing density. A bottom electrical contact to the
nanowire is uniquely provided by a heavily doped underlying lattice-match
substrate. Based on the nanowire-integrated platform, both n- and p-channel
VSG-FETs are fabricated. The vertical device architecture has the potential for
use in tera-level ultrahigh-density nanoscale memory and logic devices.
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