Description:

 Room temperature negative differential resistance (NDR) has been measured through individual organic molecules on degenerately doped Si(100) surfaces using ultrahigh vacuum scanning tunneling microscopy (STM).  This figure contains a three-dimensional rendering of an ultrahigh vacuum scanning tunneling microscope (STM) image of individual 2,2,6,6-tetramethyl-1-piperidinyloxy (TEMPO) molecules on a Si(100) surface.  NDR is observed only for negative sample bias on n-type Si(100) and for positive sample bias on p-type Si(100). This unique behavior is consistent with a resonant tunneling mechanism via molecular orbitals and opens new possibilities for silicon-based molecular electronic devices and chemical identification with STM at the single-molecule level.

 

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