Description:

Efforts have been made in recent years to develop nanoimprint lithography (NIL) as a viable technology for creating sub-100 nm patterns. In NIL nanometer-scale features of a stamp are embossed into a thin polymer layer heated above its glass transition temperature (T_g). Polymer and stamp are cooled to a temperature below the T_g of the polymer, and the stamp is detached. Imprinted structures with 10 nm resolution have been achieved this way.

High imprint temperature can cause thermal stress and degradation in the polymer film and increases process time. It is detrimental to some substrates and potential applications and is very exacting to the imprinting equipment.  Studies of these polymers help to understand how to improve the NIL process.  Above is an atomic force microscope image of 50 nm holes printed in PMMA showing polymer recovery and knots. 
 

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