Description:

Nano-imprint lithography (NIL) is based on a principle fundamentally different from that for conventional lithographies. NIL creates a resist relief pattern by deforming the resist physical shape with embossing, instead of modifying the resist chemical structure with radiation or creating the pattern by self-assembly.  The process can be visualized by imagining pressing a rubber stamp into a piece of soft clay.  The pattern is then transferred into the material to be etched (a Si wafer for example) using the resist as a mask.  For plasma (dry) etching to be successful in this kind of process it is critical that the resist polymer be fully understood and effectively immune to the plasma that etches away the underlying material.

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