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February 23, 2004
Source: Jing Zhu
References:
Description:
A simple and inexpensive room-temperature synthesis method
has been used to create the large-area silicon nanowire array shown here via
electroless metal deposition without the use of templates. This research
highlights the silver dendrite-assisted growth of single-crystalline silicon
nanowires, and their possible self-assembling nanoelectrochemistry growth
mechanism. The growth of silicon nanowires was carried out through an
electroless metal deposition process in a conventional autoclave containing
aqueous HF and AgNO3 solution near room temperature. In order to
explore the mechanism and prove the centrality of silver dendrites in the growth
of silicon nanowires, other etching solution systems with different metal
species were also investigated in this work. The morphology of etched silicon
substrates strongly depends upon the composition of the etching solution,
especially the metal species. These experimental results prove that the
simultaneous formation of silver dendrites is a guarantee of the preservation of
free-standing nanoscale electrolytic cells on the silicon substrate, and also
assists in the final formation of silicon nanowire arrays on the substrate
surface.
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