Nanopicture of the Day

www.nanopicoftheday.org

April 11, 2004

Thin Film Evolution

Source:  Haujian Gao

      References:

C. S. Ozkan, W.D. Nix and H. Gao, "Strain Relaxation and Defect Formation in Heteroepitaxial Si1-xGex Films Via Surface Roughening Induced by Controlled Annealing Experiments,''  Applied Physics Letters, Vol. 70, pp. 2247-2249 (1997).
 

Description:

Thin film materials are critical components of microelectronics, integrated optoelectronics, data storage technologies and micro-electro-mechanical systems. These technologies depend critically on the morphology, properties, behavior and reliable performance of a wide variety of metallic, semiconductor and polymeric thin films on substrates.

The above figure shows the AFM images of surface evolution in a 10 nm thick Si0.82Ge0.18/Si(100) thin films anealed at 850oC for (a) 5 min (b) 10 min (c) 20 min and (d) 2 hours.

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