Description:

Researchers are interested in the complex dynamics and surface roughness deriving from oxide desorption on crystalline Si[100] and Si[111] surfaces. The desorption is not uniform and creates in the oxide circular voids of diameter ranging from a few tens to several hundreds of nanometers. While the oxide desorbs, silicon atoms diffuse on the crystal surface and, under particular conditions, create nanocrystals of silicon at the center of each void. The void nucleation is favoured by silicon carbide or metallic contaminants. Stopping the desorption and letting new contaminants adsorb on the surface, it is possible with a second thermal treatment to create complex self-assembled structures on the silicon surface.
 

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