Chhowalla M, Teo KBK, Ducati C, Rupesinghe NL, Amaratunga GAJ, Ferrari AC, Roy D, Robertson J, Milne WI"Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition".  JOURNAL OF APPLIED PHYSICS
90 (10): 5308-5317 NOV 15 2001.


Description:

High-crystalline silicon and other semiconducting nanowires are key building blocks for electronic devices, light emitting devices, field emission sources and sensors.  Pictured is a crystalline silicon nanowire grown by the vapour-liquid-solid mechanism (VLS).  VLS growth is so named because the constituents in gas form precipitate through a liquid catalyst onto a solid crystallin surface.  Thermal-vapour-growth from solid precursors, usually in a high temperature furnace, is the most common way to obtain a bulk production of nanowires.
 

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