Nanopicture of the Day

www.nanopicoftheday.org

December 13, 2003

 

Q-Switch

Source: Alfred Forchel

      References:

L. Worschech,F. Beuscher and A. Forchel "Quantised conductance in up to 20mm long shallow etched GaAs/AlGaAs quantum wires", Appl. Phys. Lett. 75, (1999) 578.


Description:

Pictured above is a Y-branch gate aiming a gain to make use of the "wave character" of electrons. On the top you can see the electron source. The flow of the electrons can go either to the right or the left drain, depending on which of the two gates have been activated.
 

The Q-SWITCH project is aimed at the realization of semiconductor devices based on electron waveguides with the capability of low-power fast switching. The electron waveguides consist of a narrow channel (usually smaller than 100 nm), confined by heterointerfaces. Because of the small size of the devices, quantum effects, for example, electron interference, will govern the functionality of these devices. Small dimensions and high barriers introduce large lateral quantization of electron states, permitting operation at high temperatures. Device concepts utilizing electron wave transport in nm-scale waveguides are thus candidates for partial replacement of CMOS technology at the high performance end.
 

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