

October 30, 2003

Source:
Z.F. Ren et. al.
- References:
Z.F. Ren et al., "Growth of a single freestanding multiwall carbon nanotube
on each nanonickel dot" Applied Physics Letters, 75(8) 1086, 23 August
1999.
Description:
- Single freestanding multi-wall carbon nanotubes on a
nickel substrate. Physicists at Boston College have grown these structures for
the first time on a grid pattern, which might permit the tubes to be used in
field emission flat panel displays. It is not known why the tubes taper at the
top, making them look like nanoscopic versions of the Washington Monument.
Patterned growth of freestanding carbon nanotubes on
submicron nickel dots on silicon has been achieved by
plasma-enhanced-hot-filament-chemical-vapor deposition PE-HF-CVD. A thin film
nickel grid was fabricated on a silicon wafer by standard microlithographic
techniques, and the PE-HF-CVD was done using acetylene (C2H2) gas as the
carbon source and ammonia (NH3) as a catalyst and dilution gas. Well
separated, single carbon nanotubes were observed to grow on the grid. The
structures had rounded base diameters of approximately 150 nm, heights ranging
from 0.1 to 5 mm, and sharp pointed tips. Transmission electron microscopy
cross-sectional image clearly showed that the structures are indeed hollow
nanotubes. The diameter and height depend on the nickel dot size and growth
time, respectively. This nanotube growth process is compatible with silicon
integrated circuit processing. Using this method, devices requiring
freestanding vertical carbon nanotubes such as scanning probe microscopy,
field emission flat panel displays, etc. can be fabricated without difficulty.
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